Chemical Doping Effects in Multilayer MoS2 and Its Application in Complementary Inverter
DC Field | Value | Language |
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dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Hong, Seongin | - |
dc.contributor.author | On, Sungmin | - |
dc.contributor.author | Ahn, Hyungju | - |
dc.contributor.author | Lee, Han-Koo | - |
dc.contributor.author | Hong, Young Ki | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Kim, Jae-Joon | - |
dc.date.available | 2020-10-20T06:45:31Z | - |
dc.date.created | 2020-06-10 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78633 | - |
dc.description.abstract | Multilayer MoS2 has been gaining interest as a new semiconducting material for flexible displays, memory devices, chemical/biosensors, and photodetectors. However, conventional multilayer MoS2 devices have exhibited limited performances due to the Schottky barrier and defects. Here, we demonstrate poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) doping effects in multilayer MoS2, which results in improved electrical characteristics (similar to 4.6X higher on current compared to the baseline and a high current on/off ratio of 106). Synchrotron-based study using X-ray photoelectron spectroscopy and grazing incidence wide-angle X-ray diffraction provides mechanisms that align the edge-on crystallites (97.5%) of the PDPP3T as well as a larger interaction with MoS2 that leads to dipole and charge transfer effects (at annealing temperature of 300 degrees C), which support the observed enhancement of the electrical characteristics. Furthermore, we demonstrate a complementary metal-oxide-semiconductor inverter that uses a p-type MoSe2 and a PDPP3T-doped MoS2 as charging and discharging channels, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.title | Chemical Doping Effects in Multilayer MoS2 and Its Application in Complementary Inverter | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000439007700043 | - |
dc.identifier.doi | 10.1021/acsami.8b08773 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.27, pp.23270 - 23276 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85048880453 | - |
dc.citation.endPage | 23276 | - |
dc.citation.startPage | 23270 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 27 | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.contributor.affiliatedAuthor | Hong, Seongin | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | chemical doping | - |
dc.subject.keywordAuthor | multilayer MoS2 | - |
dc.subject.keywordAuthor | complementary inverter | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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