Chemical Doping Effects on CVD-Grown Multilayer MoSe2 Transistor
DC Field | Value | Language |
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dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Hong, Seongin | - |
dc.contributor.author | Moon, Hyunseong | - |
dc.contributor.author | On, Sungmin | - |
dc.contributor.author | Ahn, Hyungju | - |
dc.contributor.author | Lee, Han-Koo | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Hong, Young Ki | - |
dc.contributor.author | Kim, Jae-Joon | - |
dc.date.available | 2020-10-20T06:45:34Z | - |
dc.date.created | 2020-06-10 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78636 | - |
dc.description.abstract | Multilayer transition metal dichalcogenides (TMDs) potentially provide opportunities for large-area electronics, including flexible displays and wearable sensors. However, most TMDs suffer from a Schottky barrier (SB) and nonuniform defects, which severely limit their electrical performances. Here, a novel chemical doping scheme is presented using poly-(diketopyrrolopyrrole-terthiophene) (PDPP3T) to compensate the defects and SB of multilayer molybdenum diselenide (MoSe2), exhibiting greatly enhanced electrical characteristics, including on-current (approximate to 2000-fold higher) and photoresponsivity (approximate to 10-fold larger) over the baseline MoSe2 device. Based on comprehensive analysis using X-ray photoelectron spectroscopy, grazing incidence wide-angle X-ray diffraction, atomic force microscopy, and near-edge X-ray absorption of fine structure, it is shown that two mechanisms (dipole-induced and charge-transfer doping effects) account for such enhancements in the multilayer MoSe2 device. The methodical generality of the strong n-doping behavior of multilayer MoSe2 is further demonstrated by applying thiophene instead of PDPP3T. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.title | Chemical Doping Effects on CVD-Grown Multilayer MoSe2 Transistor | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000434944500008 | - |
dc.identifier.doi | 10.1002/aelm.201700639 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.4, no.6 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85045451522 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 4 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.contributor.affiliatedAuthor | Hong, Seongin | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | chemical doping | - |
dc.subject.keywordAuthor | hybrid devices | - |
dc.subject.keywordAuthor | MoSe2 | - |
dc.subject.keywordAuthor | multilayer transition metal dichalcogenides (TMDs) | - |
dc.subject.keywordAuthor | phototransistors | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | LAYER MOSE2 | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | DISELENIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | MOO3 | - |
dc.subject.keywordPlus | POLYMERS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | DONOR | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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