Large-area printed low-voltage organic thin film transistors: Via minimal-solution bar-coating
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sung, S. | - |
dc.contributor.author | Lee, W.-J. | - |
dc.contributor.author | Payne, M.M. | - |
dc.contributor.author | Anthony, J.E. | - |
dc.contributor.author | Kim, C.-H. | - |
dc.contributor.author | Yoon, M.-H. | - |
dc.date.available | 2020-11-30T00:41:11Z | - |
dc.date.created | 2020-11-24 | - |
dc.date.issued | 2020-11 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79103 | - |
dc.description.abstract | Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via minimal-solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from minimal solution (∼100 μL, ∼1.2 μL cm-2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10-8 A cm-2 (at 1 MV cm-1) and a high areal capacitance of 42.6 nF cm-2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink solution wasted. This journal is © The Royal Society of Chemistry. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Royal Society of Chemistry | - |
dc.relation.isPartOf | Journal of Materials Chemistry C | - |
dc.title | Large-area printed low-voltage organic thin film transistors: Via minimal-solution bar-coating | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000589067200050 | - |
dc.identifier.doi | 10.1039/d0tc03089a | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry C, v.8, no.43, pp.15112 - 15118 | - |
dc.identifier.scopusid | 2-s2.0-85096231388 | - |
dc.citation.endPage | 15118 | - |
dc.citation.startPage | 15112 | - |
dc.citation.title | Journal of Materials Chemistry C | - |
dc.citation.volume | 8 | - |
dc.citation.number | 43 | - |
dc.contributor.affiliatedAuthor | Kim, C.-H. | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | Capacitance | - |
dc.subject.keywordPlus | Chemical sensors | - |
dc.subject.keywordPlus | Coatings | - |
dc.subject.keywordPlus | Crosslinking | - |
dc.subject.keywordPlus | Dielectric properties | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | Leakage currents | - |
dc.subject.keywordPlus | Polymers | - |
dc.subject.keywordPlus | Power transistors | - |
dc.subject.keywordPlus | Semiconducting polymers | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Capacitance variation | - |
dc.subject.keywordPlus | Cross-linked polymers | - |
dc.subject.keywordPlus | Hexafluoroisopropylidene | - |
dc.subject.keywordPlus | Insulating properties | - |
dc.subject.keywordPlus | Low-leakage current | - |
dc.subject.keywordPlus | Organic thin film transistors | - |
dc.subject.keywordPlus | Polymeric dielectrics | - |
dc.subject.keywordPlus | Printing conditions | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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