Large-area printed low-voltage organic thin film transistors: Via minimal-solution bar-coating
- Authors
- Sung, S.; Lee, W.-J.; Payne, M.M.; Anthony, J.E.; Kim, C.-H.; Yoon, M.-H.
- Issue Date
- Nov-2020
- Publisher
- Royal Society of Chemistry
- Citation
- Journal of Materials Chemistry C, v.8, no.43, pp.15112 - 15118
- Journal Title
- Journal of Materials Chemistry C
- Volume
- 8
- Number
- 43
- Start Page
- 15112
- End Page
- 15118
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79103
- DOI
- 10.1039/d0tc03089a
- ISSN
- 2050-7526
- Abstract
- Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via minimal-solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from minimal solution (∼100 μL, ∼1.2 μL cm-2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10-8 A cm-2 (at 1 MV cm-1) and a high areal capacitance of 42.6 nF cm-2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink solution wasted. This journal is © The Royal Society of Chemistry.
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