Influence of Si-In-Zn-O/Ag/Si-In-Zn-O Electrode on Amorphous Si-Zn-Sn-O Thin Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Hwang, Jin Young | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.available | 2021-02-04T00:40:03Z | - |
dc.date.created | 2021-01-20 | - |
dc.date.issued | 2021-02 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79894 | - |
dc.description.abstract | Amorphous SiZnSnO (a-SZTO) thin film transistors (TFTs) have been reported with transparent Si–In–Zn–O/Ag/Si–In–Zn–O (SIZO OMO) source/drain (S/D) electrodes. The characteristics of ITO and SIZO OMO electrodes were compared with conventional metal electrode of Ti/Al. The SZTO TFT with SIZO OMO electrode showed high field effect mobility of 17.69 cm2/Vs, threshold voltage of 4.05 V and low sub-threshold swing of 0.33 V/decade. The stability of a-SZTO TFTs with SIZO OMO electrode was measured ∆VTH = 1.4 V at 333 K, and − 20 V for 7200 s under negative bias temperature stress (NBTS). © 2021, The Author(s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Korean Institute of Electrical and Electronic Material Engineers | - |
dc.relation.isPartOf | Transactions on Electrical and Electronic Materials | - |
dc.title | Influence of Si-In-Zn-O/Ag/Si-In-Zn-O Electrode on Amorphous Si-Zn-Sn-O Thin Film Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000606143200001 | - |
dc.identifier.doi | 10.1007/s42341-020-00277-x | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.22, no.1, pp.103 - 107 | - |
dc.identifier.kciid | ART002685185 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85098981656 | - |
dc.citation.endPage | 107 | - |
dc.citation.startPage | 103 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 22 | - |
dc.citation.number | 1 | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | Oxide/Metal/Oxide | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Transparent | - |
dc.subject.keywordPlus | Amorphous silicon | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Amorphous Si | - |
dc.subject.keywordPlus | Conventional metals | - |
dc.subject.keywordPlus | High field effect mobility | - |
dc.subject.keywordPlus | Negative bias | - |
dc.subject.keywordPlus | Subthreshold swing | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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