Ambipolar and anti-ambipolar thin-film transistors from edge-on small-molecule heterostructures
DC Field | Value | Language |
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dc.contributor.author | On, Sungmin | - |
dc.contributor.author | Kim, Young-Joon | - |
dc.contributor.author | Lee, Han-Koo | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.available | 2021-02-16T02:40:16Z | - |
dc.date.created | 2021-01-20 | - |
dc.date.issued | 2021-03 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79965 | - |
dc.description.abstract | Heterostructure electronic devices potentially provide opportunities for novel transistor operations, including ambipolar and anti-ambipolar switching characteristics. However, there are still no previous studies investigating the physical, chemical, and morphological properties of small-molecule semiconductor films deposited as heterojunctions. Here, we systemically investigate chemical and morphological structure in a heterostructure of small-molecule organic semiconductors using X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption of fine structure (NEXAFS), and ultraviolet photoelectron spectroscopy (UPS). The analysis reveals that dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and N,N′-ditridecylperylenediimide (PTCDI-C13) maintain their chemical compositions, energy structure, and edge-on molecular orientations (tilt angle = 66°). Furthermore, ambipolar and anti-ambipolar transistors are demonstrated using the edge-on DNTT/PTCDI-C13 heterostructure. These transistors enable CMOS-like inverter and ternary inverter operations as respective example applications of ambipolar and anti-ambipolar transistors. © 2020 Elsevier B.V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | Applied Surface Science | - |
dc.title | Ambipolar and anti-ambipolar thin-film transistors from edge-on small-molecule heterostructures | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000608942900004 | - |
dc.identifier.doi | 10.1016/j.apsusc.2020.148616 | - |
dc.identifier.bibliographicCitation | Applied Surface Science, v.542 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85097647870 | - |
dc.citation.title | Applied Surface Science | - |
dc.citation.volume | 542 | - |
dc.contributor.affiliatedAuthor | Kim, Young-Joon | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Ambipolar | - |
dc.subject.keywordAuthor | Anti-ambipolar | - |
dc.subject.keywordAuthor | Heterostructure | - |
dc.subject.keywordAuthor | Organic semiconductors | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
dc.subject.keywordPlus | Chemical analysis | - |
dc.subject.keywordPlus | Electric inverters | - |
dc.subject.keywordPlus | Molecules | - |
dc.subject.keywordPlus | Photoelectrons | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Ultraviolet photoelectron spectroscopy | - |
dc.subject.keywordPlus | X ray absorption | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Ambipolar transistors | - |
dc.subject.keywordPlus | Chemical compositions | - |
dc.subject.keywordPlus | Morphological properties | - |
dc.subject.keywordPlus | Morphological structures | - |
dc.subject.keywordPlus | Near-edge x-ray absorption | - |
dc.subject.keywordPlus | Small-molecule organic semiconductor | - |
dc.subject.keywordPlus | Switching characteristics | - |
dc.subject.keywordPlus | Transistor operation | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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