Exceptionally linear and highly sensitive photo-induced unipolar inverter device
DC Field | Value | Language |
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dc.contributor.author | Naqi, M. | - |
dc.contributor.author | Lee, Ji Ye | - |
dc.contributor.author | Lee, Byeong Hyeon | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.available | 2021-03-18T07:40:58Z | - |
dc.date.created | 2021-01-18 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/80469 | - |
dc.description.abstract | Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at VD of 5 V, high on/off ratio of 106, and stable threshold voltage (VTh) of -0.35 V. Additionally, the optical properties of the proposed FET include excellent VTh shift and photocurrent (Iphoto) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at VDD of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications. CCBY | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Journal of the Electron Devices Society | - |
dc.title | Exceptionally linear and highly sensitive photo-induced unipolar inverter device | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000622098400029 | - |
dc.identifier.doi | 10.1109/JEDS.2020.3048725 | - |
dc.identifier.bibliographicCitation | IEEE Journal of the Electron Devices Society, v.9, pp.180 - 186 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85099087528 | - |
dc.citation.endPage | 186 | - |
dc.citation.startPage | 180 | - |
dc.citation.title | IEEE Journal of the Electron Devices Society | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | amorphous silicon indium zinc oxide (a-SIZO) | - |
dc.subject.keywordAuthor | Electrodes | - |
dc.subject.keywordAuthor | Field effect transistors | - |
dc.subject.keywordAuthor | field-effect transistor (FET) | - |
dc.subject.keywordAuthor | Inverters | - |
dc.subject.keywordAuthor | Logic gates | - |
dc.subject.keywordAuthor | Optical variables measurement | - |
dc.subject.keywordAuthor | photo-induced inverter. | - |
dc.subject.keywordAuthor | phototransistor | - |
dc.subject.keywordAuthor | Phototransistors | - |
dc.subject.keywordAuthor | Semiconductor device measurement | - |
dc.subject.keywordAuthor | Unipolar inverter | - |
dc.subject.keywordPlus | Amorphous silicon | - |
dc.subject.keywordPlus | Binary alloys | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | II-VI semiconductors | - |
dc.subject.keywordPlus | Image enhancement | - |
dc.subject.keywordPlus | Indium compounds | - |
dc.subject.keywordPlus | Optical properties | - |
dc.subject.keywordPlus | Oxide semiconductors | - |
dc.subject.keywordPlus | Photocurrents | - |
dc.subject.keywordPlus | Silicon compounds | - |
dc.subject.keywordPlus | Thorium alloys | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Channel materials | - |
dc.subject.keywordPlus | High linearity | - |
dc.subject.keywordPlus | High uniformity | - |
dc.subject.keywordPlus | Indium zinc oxides | - |
dc.subject.keywordPlus | Integrated electronics | - |
dc.subject.keywordPlus | Optical characteristics | - |
dc.subject.keywordPlus | Optoelectronic applications | - |
dc.subject.keywordPlus | Photoresponses | - |
dc.subject.keywordPlus | Electric inverters | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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