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Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (vol 22, pg 133, 2021)

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dc.contributor.authorLee, Byeong Hyeon-
dc.contributor.authorKim, Dae-Hwan-
dc.contributor.authorLee, Doo-Yong-
dc.contributor.authorPark, Sungkyun-
dc.contributor.authorKim, Sangsig-
dc.contributor.authorKwon, Hyuck-In-
dc.contributor.authorLee, Sang Yeol-
dc.date.accessioned2021-05-28T08:40:04Z-
dc.date.available2021-05-28T08:40:04Z-
dc.date.created2021-04-29-
dc.date.issued2021-06-
dc.identifier.issn1229-7607-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81108-
dc.language영어-
dc.language.isoen-
dc.publisherKorean Institute of Electrical and Electronic Material Engineers-
dc.relation.isPartOfTransactions on Electrical and Electronic Materials-
dc.titleEffect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (vol 22, pg 133, 2021)-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000642362600002-
dc.identifier.doi10.1007/s42341-021-00323-2-
dc.identifier.bibliographicCitationTransactions on Electrical and Electronic Materials, v.22, no.3, pp.383 - 383-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85104666368-
dc.citation.endPage383-
dc.citation.startPage383-
dc.citation.titleTransactions on Electrical and Electronic Materials-
dc.citation.volume22-
dc.citation.number3-
dc.contributor.affiliatedAuthorLee, Sang Yeol-
dc.type.docTypeCorrection; Early Access-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassother-
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