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Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

Authors
Li, Dong HuaKim, WandongShim, Won BoPark, Se HwanKim, YoonLee, Gil SungKim, Doo-HyunLee, Jung HoonYun, Jang-GnCho, SeongjaePark, Il HanLee, Jong-HoShin, HyungcheolPark, Byung-Gook
Issue Date
Jul-2016
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Charge Trap Flash (CTF) Memory Cells; Sub-5 nm Ge-Doped Silicon Nitride Layer; Memory Window; Program Speed; Data Retention Characteristics
Citation
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.8, no.7, pp.577 - 580
Journal Title
NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume
8
Number
7
Start Page
577
End Page
580
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/8119
DOI
10.1166/nnl.2016.2036
ISSN
1941-4900
Abstract
The silicon nitride layer can be used to produce the charge trapping/detrapping characteristic in a non-volatile charge trap flash (CTF) memory device. However, it has been suggested that sub-5 nm silicon nitride layer has too little trapping/detrapping properties to embody the non-volatile memory characteristics. As the demand for smaller CTF memory cell size increases rapidly, thickness reduction of the silicon nitride layer is an inevitable technical issue. In this paper, we introduce a Ge-doping method as a new solution, and discuss how it overcomes the silicon nitride layer scaling limit by comparing the characteristics of as-grown and Ge-doped silicon nitride CTF memory cells. The sub-5 nm Ge-doped silicon nitride CTF memory cells show larger memory window, faster program speed and better data retention characteristics compared with as-grown silicon nitride CTF memory cells. These results indicate that sub-5 nm silicon nitride CTF memory cells can have sufficient trapping/detrapping properties to exhibit non-volatile memory characteristics when we use Ge-doped silicon nitride as a charge storage layer.
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