Remote Doping Effects of Indium-Gallium-Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers
DC Field | Value | Language |
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dc.contributor.author | Seo, Juhyung | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2021-06-30T01:40:05Z | - |
dc.date.available | 2021-06-30T01:40:05Z | - |
dc.date.created | 2021-05-21 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81395 | - |
dc.description.abstract | Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide semiconductors in electronic products, an effective doping method that can control the electrical characteristics of oxide TFTs is required. Here, we comprehensively investigate the effect of silane-based self-assembled monolayer (SAM) doping on IGZO TFTs. Instead of a complex doping process, the electrical performance can be enhanced by anchoring silane-based SAMs on the IGZO surface. Furthermore, differences in the doping effect based on the structure of SAMs were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in IGZO TFTs. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | MICROMACHINES | - |
dc.title | Remote Doping Effects of Indium-Gallium-Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000662349400001 | - |
dc.identifier.doi | 10.3390/mi12050481 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.12, no.5 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85105732416 | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 12 | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Seo, Juhyung | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Carbon-chain | - |
dc.subject.keywordAuthor | Doping effect control | - |
dc.subject.keywordAuthor | IGZO transistors | - |
dc.subject.keywordAuthor | N-doping | - |
dc.subject.keywordAuthor | ODTS | - |
dc.subject.keywordAuthor | OTS | - |
dc.subject.keywordAuthor | SAM | - |
dc.subject.keywordPlus | Gallium | - |
dc.subject.keywordPlus | Hall mobility | - |
dc.subject.keywordPlus | Hole mobility | - |
dc.subject.keywordPlus | II-VI semiconductors | - |
dc.subject.keywordPlus | Indium | - |
dc.subject.keywordPlus | Organic polymers | - |
dc.subject.keywordPlus | Oxide semiconductors | - |
dc.subject.keywordPlus | Self assembled monolayers | - |
dc.subject.keywordPlus | Semiconducting indium compounds | - |
dc.subject.keywordPlus | Semiconductor doping | - |
dc.subject.keywordPlus | Silanes | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Effective doping | - |
dc.subject.keywordPlus | Electrical characteristic | - |
dc.subject.keywordPlus | Electrical performance | - |
dc.subject.keywordPlus | Electronic product | - |
dc.subject.keywordPlus | Flexible substrate | - |
dc.subject.keywordPlus | High carrier mobility | - |
dc.subject.keywordPlus | Oxide thinfilm transistors (TFTs) | - |
dc.subject.keywordPlus | Zinc oxide thin films | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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