Robust molybdenum diselenide ambipolar transistors with fluoropolymer interfacial layer and their application to complementary inverter circuits
DC Field | Value | Language |
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dc.contributor.author | Hong, Seongin | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2021-07-04T03:41:59Z | - |
dc.date.available | 2021-07-04T03:41:59Z | - |
dc.date.created | 2021-03-04 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81498 | - |
dc.description.abstract | Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDs) have been extensively studied as promising semiconducting materials for complementary metal–oxide semiconductor (CMOS) technology because their family includes p- and n-type semiconductors with excellent electrical properties. However, systematic stability tests and robustness enhancement methods for TMD field-effect transistors (FETs) for implementing high-reliability 2D-material CMOS technology have not been reported. Herein, we report MoSe2 FETs with well-balanced ambipolar charge-transport properties and high stability arising from the p-type doping effect and the minimization of charge trapping, which were due to the insertion of a fluoropolymer (Cytop) interfacial layer at the MoSe2/SiO2 interface. Ambipolar MoSe2 FETs with a Cytop interfacial layer are systematically examined via harsh stress tests to evaluate their stability. Additionally, we demonstrate a 2D-material CMOS inverter based on ambipolar MoSe2 FETs with Cytop, which exhibits high performance and excellent stability, such as a full logic swing and robust retention characteristics without degradation for 5000 cycles. This study suggests a novel strategy for developing 2D-material CMOS circuits with high performance and stability. © 2021 Elsevier B.V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | Journal of Alloys and Compounds | - |
dc.title | Robust molybdenum diselenide ambipolar transistors with fluoropolymer interfacial layer and their application to complementary inverter circuits | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000636039600102 | - |
dc.identifier.doi | 10.1016/j.jallcom.2021.159212 | - |
dc.identifier.bibliographicCitation | Journal of Alloys and Compounds, v.868 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85101421485 | - |
dc.citation.title | Journal of Alloys and Compounds | - |
dc.citation.volume | 868 | - |
dc.contributor.affiliatedAuthor | Hong, Seongin | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | Bias stress | - |
dc.subject.keywordAuthor | MoSe2 inverter | - |
dc.subject.keywordAuthor | Temperature stress | - |
dc.subject.keywordAuthor | Transition-metal dichalcogenides | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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