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Improved UV photodetector performance of NiO films by substitutional incorporation of Li
- Issue Date
- 15-Oct-2021
- Publisher
- ELSEVIER
- Keywords
- Detectivity; Li incorporation; NiO; Photodetector; Responsivity
- Citation
- Materials Letters, v.301
- Journal Title
- Materials Letters
- Volume
- 301
- ISSN
- 0167-577X
- Abstract
- In this study, NiO and Li0.2Ni0.8O (LNO) thin films are successfully deposited by sputtering technique. X-ray photoelectron spectroscopy (XPS) analysis revealed the existence of Ni vacancies. Here, we fabricated metal-semiconductor-metal (M-S-M) structure for exploring the ultra-violet (UV) photodetector (PD) performance. The impact of interstitial oxygen and substitutional incorporation of monovalent Li+ ion in Ni2+ sites of NiO on UV photodetector performance are explored. In a word, LNO exhibited superior responsivity (0.218 A/W) and detectivity (0.467 × 1012 Jones) even at lower power density of 0.31 mW/cm2. © 2021 Elsevier B.V.
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Related Researcher
- Sreedhar, Adem
- BioNano Technology (Department of Physics)