Bulk versus Contact Doping in Organic Semiconductors
- Authors
- Kim, Chang-Hyun
- Issue Date
- Jul-2021
- Publisher
- MDPI
- Keywords
- Contact effects; Doping; Field-effect transistors; Organic semiconductors
- Citation
- Micromachines, v.12, no.7
- Journal Title
- Micromachines
- Volume
- 12
- Number
- 7
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81799
- DOI
- 10.3390/mi12070742
- ISSN
- 2072-666X
- Abstract
- This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various positionand density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages. © 2021 by the author. Licensee MDPI, Basel, Switzerland.
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