Investigation on the Relaxation Time Response of Metal Capped Amorphous Oxide Si-In-Zn-O Thin Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2021-08-09T07:40:07Z | - |
dc.date.available | 2021-08-09T07:40:07Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2021-08 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81836 | - |
dc.description.abstract | Relaxation time of metal capped amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) has been investigated. As increasing the length of metal capping layer, the electrical characteristics improved and threshold voltage (V-th) moved to negative direction from 1.4 to 0.6 V. The fabrication of thin film type inverter was conducted with the SIZO TFT of enhancement mode and 40 mu m metal capped SIZO TFT of depletion mode. The voltage transfer curve showed inversion clearly. The relaxation time has been measured to confirm the electrical performance in the case of TFTs, indicating insignificant signal distortion. This result means it is possible to apply to integrated circuits or the next generation memory devices without any significant signal distortion. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Korean Institute of Electrical and Electronic Material Engineers | - |
dc.relation.isPartOf | Transactions on Electrical and Electronic Materials | - |
dc.title | Investigation on the Relaxation Time Response of Metal Capped Amorphous Oxide Si-In-Zn-O Thin Film Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000647943200001 | - |
dc.identifier.doi | 10.1007/s42341-021-00335-y | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.22, no.4, pp.419 - 423 | - |
dc.identifier.kciid | ART002744916 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85105521481 | - |
dc.citation.endPage | 423 | - |
dc.citation.startPage | 419 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 22 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article; Early Access | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | a-SIZO | - |
dc.subject.keywordAuthor | Metal capping layer | - |
dc.subject.keywordAuthor | Relaxation time | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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