High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays
DC Field | Value | Language |
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dc.contributor.author | Jeong, Duk Young | - |
dc.contributor.author | Billah, Mohammad Masum | - |
dc.contributor.author | Siddik, Abu Bakar | - |
dc.contributor.author | Han, Byungju | - |
dc.contributor.author | Chang, Yeoungjin | - |
dc.contributor.author | Jang, Jin | - |
dc.date.accessioned | 2021-08-11T01:40:22Z | - |
dc.date.available | 2021-08-11T01:40:22Z | - |
dc.date.created | 2021-08-11 | - |
dc.date.issued | 2021-08 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81843 | - |
dc.description.abstract | We report a dual gate (DG), low-temperature polysilicon (LTPS) thin-film transistor ( TFT) using blue laser annealing (BLA) of amorphous silicon. The DG TFTs with variable bottom gate lengths (LBG) from 2 to 8 mu m and a fixed top gate length (LTG) of 6 mu m are investigated. The drain currents of the DG LTPS TFT with LBG > LTG by 2 mu m under DG sweep (DS) are similar to 4.3 times those of the single gate TFT. The high carrier concentrations (similar to 10(19) cm(-3)) at both interfaces (top gate insulator(GI)/poly-Si and poly-Si/bottom GI) under DS is confirmed by technology computer-aided design (TCAD) simulation, which might lead to high drain currents. The poly-Si layer exhibits no grain boundary protrusion from the transmission electron microscopy (TEM) cross-sectionalmicrograph and thus induces a strong bulk accumulation effect under DS. The fabricated DG TFT-based ring oscillator (RO) and shift register (SR) exhibit an excellent oscillation frequency of 15.8MHz, fast- rising and falling time of 370 and 366 ns at a driving voltage of -10 V, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.title | High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000678349800026 | - |
dc.identifier.doi | 10.1109/TED.2021.3091965 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.8, pp.3863 - 3869 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85111686111 | - |
dc.citation.endPage | 3869 | - |
dc.citation.startPage | 3863 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 68 | - |
dc.citation.number | 8 | - |
dc.contributor.affiliatedAuthor | Chang, Yeoungjin | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Blue laser annealing (BLA) | - |
dc.subject.keywordAuthor | coplanar thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | low temperature polysilicon (LTPS) | - |
dc.subject.keywordAuthor | technology computer-aided design (TCAD) | - |
dc.subject.keywordPlus | TEMPERATURE POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | A-IGZO TFT | - |
dc.subject.keywordPlus | GRAIN-BOUNDARY | - |
dc.subject.keywordPlus | DRIVER CIRCUIT | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordPlus | TOP | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FIELD | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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