Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.accessioned | 2021-09-09T00:40:27Z | - |
dc.date.available | 2021-09-09T00:40:27Z | - |
dc.date.created | 2021-08-23 | - |
dc.date.issued | 2021-09 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82088 | - |
dc.description.abstract | This letter proposes an advanced compact model for anti-ambipolar transistors based on a lateral thin-film material heterojunction. The modeling idea focuses on an analytical description of component currents and bridging methods necessary for controllable transition between operation regimes. The model is validated by experimental data, and predictive simulations are carried out to demonstrate its applicabilities. IEEE | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.title | Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000690440900021 | - |
dc.identifier.doi | 10.1109/LED.2021.3102219 | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.42, no.9, pp.1323 - 1326 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85112590811 | - |
dc.citation.endPage | 1326 | - |
dc.citation.startPage | 1323 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 42 | - |
dc.citation.number | 9 | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Article in Press | - |
dc.subject.keywordAuthor | Analytical models | - |
dc.subject.keywordAuthor | anti-ambipolar transistors | - |
dc.subject.keywordAuthor | Compact modeling | - |
dc.subject.keywordAuthor | Heterojunctions | - |
dc.subject.keywordAuthor | interface phenomena | - |
dc.subject.keywordAuthor | Logic gates | - |
dc.subject.keywordAuthor | Mathematical model | - |
dc.subject.keywordAuthor | p-n heterojunction | - |
dc.subject.keywordAuthor | Predictive models | - |
dc.subject.keywordAuthor | thin-film electronics | - |
dc.subject.keywordAuthor | Transistors | - |
dc.subject.keywordAuthor | Voltage measurement | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Ambipolar transistors | - |
dc.subject.keywordPlus | Analytical description | - |
dc.subject.keywordPlus | Bridging methods | - |
dc.subject.keywordPlus | Compact model | - |
dc.subject.keywordPlus | Operation regime | - |
dc.subject.keywordPlus | Predictive simulations | - |
dc.subject.keywordPlus | Thin film material | - |
dc.subject.keywordPlus | Unified compact model | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.