Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2020-02-28T01:45:02Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/8248 | - |
dc.description.abstract | In this paper, we propose and investigate a dual-spacer dielectric structure for realizing a sub-10 nm tunneling field-effect transistors (TFET) with excellent low-power (LP) and switching performance. The effects of the dual-spacer dielectric were assessed by analyzing the direct current (DC) and radio frequency (RF) performance of the GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction-based short channel TFETs. The dual-spacer dielectric that consists of hafnium oxide (HfO2) and silicon dioxide (SiO2) raises an energy-band on drain-side because of the fringe field induced by the high-k spacer dielectric HfO2. The raised energy-band suppresses direct band-to-band tunneling (BBT) through the channel region and drain-induced barrier thinning (DIBT) phenomenon with improvement in the off-state current (I-off) and subthreshold swing (S). The dual-spacer dielectric also influences total gate capacitance (C-gg) because the HfO2 in the dual-spacer dielectric increases out-fringe capacitance (C-of) in gate-to-drain capacitance (C-gd). Although the proposed TFET has a high C-gd, the optimized TFET with the HfO2 length (Ldual-spacer) of 30 nm achieves a lower intrinsic delay time (t), a higher cut-off frequency (f(T)), and a higher maximum oscillation frequency (f(max)) owing to higher current performance and smaller gate-to-source capacitance (C-gs). (C) 2016 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | SIGE | - |
dc.title | Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000377484100023 | - |
dc.identifier.doi | 10.7567/JJAP.55.06GG02 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.6 | - |
dc.identifier.scopusid | 2-s2.0-84974603659 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 55 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SIGE | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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