Mechanism of Extraordinary High Mobility in Multilayered Amorphous Oxide Thin Film Transistor
- Authors
- Lee, Ji Ye; Lee, Sang Yeol
- Issue Date
- Nov-2021
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Amorphous silicon indium zinc oxide (a-SIZO); field effect mobility (& #x03BC; FE); Iron; Logic gates; multilayered structure; Nonhomogeneous media; Semiconductor device measurement; Stress; Thermal stability; Thin film transistors; thin-film transistor (TFT).
- Citation
- IEEE Transactions on Electron Devices, v.68, no.11, pp.5618 - 5622
- Journal Title
- IEEE Transactions on Electron Devices
- Volume
- 68
- Number
- 11
- Start Page
- 5618
- End Page
- 5622
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82772
- DOI
- 10.1109/TED.2021.3115732
- ISSN
- 0018-9383
- Abstract
- Amorphous oxide-based thin-film transistors (TFTs) have been applied to display and various next-generation applications. The amorphous oxide thin film has exhibited a higher electrical mobility and stability characteristics in recent decades. A multilayer thin-film structure has been fabricated and analyzed using amorphous Si-In-Zn-O (a-SIZO) and amorphous Si-Zn-Sn-O (a-SZTO) materials. The a-SIZO had a current value of more than 10⁻³ A without off-current (like metal) when fabricated as a single layer of thin film. The fabricated bilayer TFT shows an improved field effect mobility upon inserting the a-SIZO conductive semiconductor layer at the bottom. With the aforementioned architecture, we have achieved a mobility that is higher than 160 cm²/V·s with a <formula> <tex>$V_{th}$</tex> </formula> shift of 1.19 V under negative bias temperature stress (NBTS) for an amorphous-based semiconducting multilayer TFT. IEEE
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