Quantitative and rapid detection of iodide ion via electrolyte-gated IGZO thin-film transistors
- Authors
- Hwang, Chuljin; Kwak, Taehyun; Kim, Chang-Hyun; Kim, Joo Hee; Park, Sungjun
- Issue Date
- Feb-2022
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Electrolyte gated thin-film-transistors; Electrical double layer; Redox reaction; Iodide ion; Point-of-care testing
- Citation
- SENSORS AND ACTUATORS B-CHEMICAL, v.353
- Journal Title
- SENSORS AND ACTUATORS B-CHEMICAL
- Volume
- 353
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82845
- DOI
- 10.1016/j.snb.2021.131144
- ISSN
- 0925-4005
- Abstract
- In this study, rapid-detection iodide ion sensors based on sol-gel indium-gallium-zinc-oxide electrolyte gated thin-film transistors (IGZO-EGTFTs) have been examined. With a high electrical-double-layer capacitance (6.2 mu F/cm(2)) at the interface between IGZO channel and physiological fluid (i.e., phosphate-buffered saline and artificial urine solution), the EGTFTs can be operated under 0.5 V with a high ON and OFF state current ratio above 10 8 , and transconductance value of 1.14 mS. In addition to excellent electrical characteristics, the novel electrochemical reaction of IGZO-EGTFTs enables high selectivity and linear response over a wide detection range of iodide ions concentration (from 1 to 10(4) mu M), the limit of detection as low as 1 mu M, and response time below 0.1 s. The mechanism of iodide ions detection of IGZO-EGTFT was investigated based on electrochemical impedance spectroscopy analysis. We expect that IGZO-EGTFTs will contribute to the development of point-of-care rapid and reusable ion-sensors for human urine and serum.
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