Evidence of ambient doping in pentacene rectifying diodes
- Authors
- Kim, Chang-Hyun
- Issue Date
- Jan-2022
- Publisher
- American Institute of Physics Inc.
- Citation
- AIP Advances, v.12, no.1
- Journal Title
- AIP Advances
- Volume
- 12
- Number
- 1
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83404
- DOI
- 10.1063/5.0063965
- ISSN
- 2158-3226
- Abstract
- Organic rectifying diodes (ORDs) are a structurally simple yet functionally versatile element for advanced electronics. However, their operating principle, in association with the specificities of organic materials, is not well conceptualized. This study provides a comprehensive insight into a fundamental device phenomenon in ORDs, namely, ambient doping, and reveals for the first time its various footprints strongly affecting multiple in-device locations and operating regimes. High-performance pentacene-based diodes are fabricated and characterized in detail through current-voltage analysis, capacitance-voltage measurements, and broadband impedance spectroscopy. A highly analytical and correlative treatment of the whole data results in precise extraction of critical charge-injection, transport, and doping parameters, as well as a validated circuit model that systematically decouples the contact and bulk electronic processes governing the operation of ORDs. © 2022 Author(s).
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