Electrical Performance of Amorphous Oxide/Colloidal Quantum Dot/Amorphous Oxide Hybrid Thin Film Transistor

Abstract

Hybrid-type thin-film transistors were fabricated using amorphous oxide and colloidal quantum dots. To prevent damage to the quantum dots, amorphous SIZO, which can be processed at low temperatures, was deposited by RF sputtering. In the case of a general hybrid type device, it is known that the characteristics of a multilayer material are significantly lower than that of a single material, and this is greatly affected by the interface characteristics between each material. The electrical characteristics of a single SIZO TFT, such as threshold voltage, field-effect mobility, on/off current ratio, and subthreshold slope, have been observed as -0.15 V, 9.54 cm(2)/Vs, 2.9 x 10(8), and 0.34 V/dec, respectively while electrical characteristics of hybrid-type OQO TFT were observed as 1.39 V, 9.19 cm(2)/Vs, 3.9 x 10(8), and 0.35 V/dec, respectively. As a result, it was confirmed that the electrical characteristics did not change significantly when the single SIZO TFT and the hybrid type OQO TFT have been compared in this experiment. Its electrical properties are mainly driven by the upper and lower a-SIZO layers. a-SIZO which has amorphous properties, can provide excellent surface properties because it can completely cover the spherical QD when it comes into contact with the QD. These results are expected to be applicable to many important applications.