Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin
- Authors
- Yoo, Hyobin; Yoon, Sangmoon; Chung, Kunook; Kang, Seoung-Hun; Kwon, Young-Kyun; Yi, Gyu-Chul; Kim, Miyoung
- Issue Date
- Mar-2018
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.112, no.13
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 112
- Number
- 13
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83620
- DOI
- 10.1063/1.5018598
- ISSN
- 0003-6951
- Abstract
- We report our findings on the optical properties of grain boundaries in GaN films grown on graphene layers and discuss their atomistic origin. We combine electron backscatter diffraction with cathodoluminescence to directly correlate the structural defects with their optical properties, enabling the high-precision local luminescence measurement of the grain boundaries in GaN films. To further understand the atomistic origin of the luminescence properties, we carefully probed atomic core structures of the grain boundaries by exploiting aberration-corrected scanning transmission electron microscopy. The atomic core structures of grain boundaries show different ordering behaviors compared with those observed previously in threading dislocations. Energetics of the grain boundary core structures and their correlation with electronic structures were studied by first principles calculation. Published by AIP Publishing.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83620)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.