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Preferential growth of boron layer in magnesium diboride (MgB2) by Mg diffusion method

Authors
Heo, Yoon-UkYoon, SangmoonKim, Jung HoKim, Young-KiKim, MiyoungSong, Tae-JinMaeda, MinoruDou, Shi Xue
Issue Date
Nov-2017
Publisher
ELSEVIER SCIENCE SA
Keywords
MgB2; Boron-terminated growth; Grain boundary conductivity; TEM; First principles calculation
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.725, pp.526 - 535
Journal Title
JOURNAL OF ALLOYS AND COMPOUNDS
Volume
725
Start Page
526
End Page
535
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83621
DOI
10.1016/j.jallcom.2017.07.186
ISSN
0925-8388
Abstract
Growth mechanism and grain boundary (GB) contact of polycrystalline MgB2 fabricated by Mg diffusion method are studied by STEM and EELS analyses. In contrast to the previous reports based on the computational calculation, preferential growth of (001) boron (B) layer and the B-B contact at MgB2 GBs are confirmed by annular dark field (ADF) -STEM image and the combined EELS analyses. The effect of BB contact at the GB on the superconductivity is further evaluated using First principles calculation. Superior GB linkage of the supercurrent flow via GB B-B contact is expected from the calculated density of states at Fermi level. B-terminated growth mechanism in Mg diffusion method and the effect of GB connectivity via B-B and Mg-Mg contacts are discussed. Finally, we suggest a model of GB linkage of supercurrent flow via B-B contact in polycrystalline MgB2. (C) 2017 Elsevier B.V. All rights reserved.
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