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Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors (vol 5, 58, 2021)

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dc.contributor.authorCho, Hae Won-
dc.contributor.authorPujar, Pavan-
dc.contributor.authorChoi, Minsu-
dc.contributor.authorKang, Seunghun-
dc.contributor.authorHong, Seongin-
dc.contributor.authorPark, Junwoo-
dc.contributor.authorBaek, Seungho-
dc.contributor.authorKim, Yunseok-
dc.contributor.authorLee, Jaichan-
dc.contributor.authorKim, Sunkook-
dc.date.accessioned2022-03-15T06:41:19Z-
dc.date.available2022-03-15T06:41:19Z-
dc.date.created2022-03-15-
dc.date.issued2021-05-
dc.identifier.issn2397-7132-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83674-
dc.description.abstractThe original version of this Article contained an error in the Acknowledgements: ‘2021R1A2B5B0200216’ should have read ‘2021R1A2B5B02002167’. This has now been corrected in both the PDF and HTML versions of the Article. © The Author(s) 2021.-
dc.language영어-
dc.language.isoen-
dc.publisherNATURE RESEARCH-
dc.relation.isPartOfNPJ 2D MATERIALS AND APPLICATIONS-
dc.titleDirect growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors (vol 5, 58, 2021)-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000658942400001-
dc.identifier.doi10.1038/s41699-021-00240-1-
dc.identifier.bibliographicCitationNPJ 2D MATERIALS AND APPLICATIONS, v.5, no.1-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85106951941-
dc.citation.titleNPJ 2D MATERIALS AND APPLICATIONS-
dc.citation.volume5-
dc.citation.number1-
dc.contributor.affiliatedAuthorHong, Seongin-
dc.type.docTypeCorrection-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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