Recent progress in high-mobility thin-film transistors based on multilayer 2D materials
DC Field | Value | Language |
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dc.contributor.author | Hong, Young Ki | - |
dc.contributor.author | Liu, Na | - |
dc.contributor.author | Yin, Demin | - |
dc.contributor.author | Hong, Seongin | - |
dc.contributor.author | Kim, Dong Hak | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Choi, Woong | - |
dc.contributor.author | Yoon, Youngki | - |
dc.date.accessioned | 2022-03-15T06:41:45Z | - |
dc.date.available | 2022-03-15T06:41:45Z | - |
dc.date.created | 2022-03-15 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83681 | - |
dc.description.abstract | Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.title | Recent progress in high-mobility thin-film transistors based on multilayer 2D materials | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000415254700001 | - |
dc.identifier.doi | 10.1088/1361-6463/aa5e8a | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.16 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85018469348 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 16 | - |
dc.contributor.affiliatedAuthor | Hong, Seongin | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | 2D semiconductors | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | flexible | - |
dc.subject.keywordAuthor | transparent | - |
dc.subject.keywordAuthor | opto-electronics | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | FEW-LAYER MOS2 | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | GRAPHENE TRANSISTORS | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | PHOTOCURRENT GENERATION | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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