High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
DC Field | Value | Language |
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dc.contributor.author | Hong, Young Ki | - |
dc.contributor.author | Yoo, Geonwook | - |
dc.contributor.author | Kwon, Junyeon | - |
dc.contributor.author | Hong, Seongin | - |
dc.contributor.author | Song, Won Geun | - |
dc.contributor.author | Liu, Na | - |
dc.contributor.author | Omkaram, Inturu | - |
dc.contributor.author | Yoo, Byungwook | - |
dc.contributor.author | Ju, Sanghyun | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Oh, Min Suk | - |
dc.date.accessioned | 2022-03-15T06:41:56Z | - |
dc.date.available | 2022-03-15T06:41:56Z | - |
dc.date.created | 2022-03-15 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83685 | - |
dc.description.abstract | Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range. (C) 2016 Author(s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | AIP ADVANCES | - |
dc.title | High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000377962500026 | - |
dc.identifier.doi | 10.1063/1.4953062 | - |
dc.identifier.bibliographicCitation | AIP ADVANCES, v.6, no.5 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-84973163865 | - |
dc.citation.title | AIP ADVANCES | - |
dc.citation.volume | 6 | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Hong, Seongin | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | CONTACT | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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