Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
DC Field | Value | Language |
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dc.contributor.author | Lee, Inyoung | - |
dc.contributor.author | Park, Hyojin | - |
dc.contributor.author | Nguyen, Quan The | - |
dc.contributor.author | Kim, Garam | - |
dc.contributor.author | Cho, Seong Jae | - |
dc.contributor.author | Cho, Ilhwan | - |
dc.date.accessioned | 2022-03-29T06:40:04Z | - |
dc.date.available | 2022-03-29T06:40:04Z | - |
dc.date.created | 2022-03-29 | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83851 | - |
dc.description.abstract | A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | Micromachines | - |
dc.title | Optimization of Feedback FET with Asymmetric Source Drain Doping Profile | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000786338700001 | - |
dc.identifier.doi | 10.3390/mi13040508 | - |
dc.identifier.bibliographicCitation | Micromachines, v.13, no.4 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85128407985 | - |
dc.citation.title | Micromachines | - |
dc.citation.volume | 13 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Cho, Seong Jae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | feedback field-effect transistor (FBFET) | - |
dc.subject.keywordAuthor | device optimization | - |
dc.subject.keywordAuthor | on-off current ratio | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | TCAD | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | PERSPECTIVES | - |
dc.subject.keywordPlus | MOS | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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