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Cited 2 time in webofscience Cited 2 time in scopus
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Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

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dc.contributor.authorLee, Inyoung-
dc.contributor.authorPark, Hyojin-
dc.contributor.authorNguyen, Quan The-
dc.contributor.authorKim, Garam-
dc.contributor.authorCho, Seong Jae-
dc.contributor.authorCho, Ilhwan-
dc.date.accessioned2022-03-29T06:40:04Z-
dc.date.available2022-03-29T06:40:04Z-
dc.date.created2022-03-29-
dc.date.issued2022-04-
dc.identifier.issn2072-666X-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83851-
dc.description.abstractA feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.-
dc.language영어-
dc.language.isoen-
dc.publisherMDPI-
dc.relation.isPartOfMicromachines-
dc.titleOptimization of Feedback FET with Asymmetric Source Drain Doping Profile-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000786338700001-
dc.identifier.doi10.3390/mi13040508-
dc.identifier.bibliographicCitationMicromachines, v.13, no.4-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85128407985-
dc.citation.titleMicromachines-
dc.citation.volume13-
dc.citation.number4-
dc.contributor.affiliatedAuthorCho, Seong Jae-
dc.type.docTypeArticle-
dc.subject.keywordAuthorfeedback field-effect transistor (FBFET)-
dc.subject.keywordAuthordevice optimization-
dc.subject.keywordAuthoron-off current ratio-
dc.subject.keywordAuthorsubthreshold swing-
dc.subject.keywordAuthorTCAD-
dc.subject.keywordPlusNEGATIVE CAPACITANCE-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusPERSPECTIVES-
dc.subject.keywordPlusMOS-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaInstruments & Instrumentation-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Analytical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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