Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-28T02:42:46Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/8405 | - |
dc.description.abstract | In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si3N4/TiN and Ag/Si3N4/p(+) Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.subject | RRAM | - |
dc.title | Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000375763900002 | - |
dc.identifier.doi | 10.5573/JSTS.2016.16.2.147 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2 | - |
dc.identifier.kciid | ART002100854 | - |
dc.identifier.scopusid | 2-s2.0-84964866706 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 16 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Electrochemical metallization memory | - |
dc.subject.keywordAuthor | conductive-bridge random-access memory | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordAuthor | metal-insulator-metal | - |
dc.subject.keywordAuthor | metal-insulator-silicon | - |
dc.subject.keywordPlus | RRAM | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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