Phase transformation of sputtered hafnium oxide by post annealing treatment and its effect on the amorphous Si-In-Zn-O thin film transistor
DC Field | Value | Language |
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dc.contributor.author | Kumar, Akash | - |
dc.contributor.author | Lee, Ji Ye | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2022-04-28T02:40:14Z | - |
dc.date.available | 2022-04-28T02:40:14Z | - |
dc.date.created | 2022-04-28 | - |
dc.date.issued | 2022-06-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84115 | - |
dc.description.abstract | The effect of post annealing treatment on the phase transformation and the electrical properties of the sputtered hafnium oxide (HfO2) is investigated. As-deposited HfO2 films were annealed at 200 and 400 ? in ambient conditions. Film annealed at 200 ?& nbsp;is amorphous, but further annealing at 400 ?& nbsp;crystallizes it into the monoclinic structure. Amorphous films exhibit a higher bandgap (>=& nbsp;5.8 eV) than the monoclinic film (asymptotic to 5.65 eV). The electrical characteristics of the Metal-Insulator-Metal devices reveal a nonlinear capacitance with respect to the voltage. The nonlinearity is predominant in the as-deposited film due to the oxygen vacancy related defects formed during the deposition. However, excess Hf-O bond formation occurs with annealing at higher temperatures, reducing the capacitance-voltage curve's nonlinearity. The dielectric constant of the as-deposited, 200, and 400 ?& nbsp;annealed films are estimated as 22.35, 22.64, and 20.57, respectively. The increment in the dielectric constant at 200 ?& nbsp;is due to its amorphous phase and reduced defects. Amorphous Si-In-Zn-O thin film transistors fabricated using the as-deposited and annealed hafnium oxide as gate insulator show almost similar threshold voltage of asymptotic to & nbsp;-1 V. The transistor with hafnium oxide annealed at 200 ?& nbsp;shows the highest on current (1.04 x 10(-6) A) followed by as-deposited (6.82 x 10(-7) A) and 400 ?& nbsp;annealed device (5.86 x 10(-7) A), respectively. Moreover, the interface state density increases monotonically from 3.98 x 10(12) to 1.11 x 10(13) cm(-2) for as-deposited and 400 ?, respectively. The increment in the interface state density is due to the grain boundary formation due to the crystallization of HfO2. (C)& nbsp;2022 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.title | Phase transformation of sputtered hafnium oxide by post annealing treatment and its effect on the amorphous Si-In-Zn-O thin film transistor | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000779682100005 | - |
dc.identifier.doi | 10.1016/j.jallcom.2022.164289 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.906 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85125281228 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 906 | - |
dc.contributor.affiliatedAuthor | Kumar, Akash | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | High k dielectrics | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | Post annealing treatment | - |
dc.subject.keywordAuthor | a-SIZO thin film transistor | - |
dc.subject.keywordAuthor | Capacitance-Voltage measurement | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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