Frequency doubler based on unipolar thin-film-transistor technologies
- Authors
- Ko, Eun-Hye; Kim, Chang-Hyun
- Issue Date
- Mar-2022
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Flexible electronics; Frequency doublers; Organic semiconductors; Thin-film transistors; Unipolar circuits
- Citation
- Solid-State Electronics, v.189
- Journal Title
- Solid-State Electronics
- Volume
- 189
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84508
- DOI
- 10.1016/j.sse.2022.108237
- ISSN
- 0038-1101
- Abstract
- In this study, a new simulation-based design of thin-film-transistor (TFT) frequency-doubling circuits is proposed. Considering the increasingly high technological relevance of novel TFT channel materials showing strongly unipolar charge transport characteristics, the proposed frequency doubler adopts a unipolar circuit topology composed of organic p-type TFTs as a model system. By comparing different circuit structures and optimizing key TFT parameters, an apparent symmetry at the specific, non-traditional voltage-transfer curve of the simple two-transistor logic inverter is obtained, which is directly exploited to produce an ideal frequency-multiplying behavior over a wide operational frequency range. © 2022 Elsevier Ltd
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