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Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors
- Authors
- Jung, Sang Wook; Chae, Soo Sang; Park, Jee Ho; Oh, Jin Young; Bhang, Suk Ho; Baik, Hong Koo; Lee, Tae Il
- Issue Date
- 23-Mar-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- metal oxide semiconductor; thin film transistor; metal patterning; soft-lithography; contact printing
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.11, pp.7205 - 7211
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 11
- Start Page
- 7205
- End Page
- 7211
- ISSN
- 1944-8244
- Abstract
- We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 mu m. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.
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Related Researcher
- Lee, Tae Il
- Engineering (Department of Materials Science & Engineering)