Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-28T02:44:08Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/8489 | - |
dc.description.abstract | In this work, low-power bipolar resistive switching is demonstrated in a fully complementary metal-oxide-semiconductor-compatible Ni/Ti/SiOx/p(+)-Si resistive random-access memory (RRAM) device. The proposed device shows higher nonlinearity in the low-resistance state (LRS), lower reset current (< 1 mu A), and better endurance cycles in comparison with Ni/SiOx/p(+)-Si RRAM device without the Ti insertion layer. The self-compliance properties can effectively alleviate current overshoot, thanks to Ti buffer layer acting as a built-in series resistance. TiOx layer from oxygen scavenging ensures nonlinear current-voltage (I-V) characteristics for high-density integration in the cross-point array architecture. It is found that the thermal coefficient of Ti in the LRS provides a clue to switching mechanism underlying the hopping conduction with semiconducting behavior. (C) 2016 American Vacuum Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.subject | LOW-POWER | - |
dc.subject | DEVICE | - |
dc.subject | RRAM | - |
dc.title | Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000376782200052 | - |
dc.identifier.doi | 10.1116/1.4943560 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.34, no.2 | - |
dc.identifier.scopusid | 2-s2.0-84961797204 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 34 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | RRAM | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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