Effect of the oxygen dependent device parameters on the electrical properties of a-Si-Zn-Sn-O thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kumar, Akash | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2022-07-19T02:40:56Z | - |
dc.date.available | 2022-07-19T02:40:56Z | - |
dc.date.created | 2022-07-19 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85025 | - |
dc.description.abstract | The effect of partial pressure of oxygen on the amorphous Si-Zn-Sn-O thin film transistor is investigated. Sput-tered amorphous films were deposited at various oxygen partial pressures (O2/(Ar + O2) = 0, 0.07, and 0.11). The parameters, such as threshold voltage, field effect mobility, subthreshold slope, and ON current for the channel deposited at PO2 = 0 are obtained as-6.47 V, 23.98 cm2V-1s-1, 663 mV/dec, and 3.11 x 10-4 A, respectively. From the transfer curve (ID-VGS) of transistors fabricated at various PO2, it is observed that while the threshold voltage shifts from-6.47 to 0.21 V, the current decreases from 3.11 x 10-4 to 2.46 x 10-4 A with increasing PO2. The increment in current at lower PO2 is due to the introduction of excess charge carriers as a result of elevated oxygen vacancies. It is further confirmed by the transmission line measurement that the channel resistance monotonously decreases as a function of oxygen flow rate. Moreover, the contact resistance increases from 0.96 to 1.95 k Omega, with respect to the increased oxygen content. The increment in contact resistance is a result of the formation of an oxide layer (TiOx) at the electrode and channel interface. The thickness of the oxide layer increases from 0.86 to 2.81 mu m with increasing oxygen partial pressure, suggesting that the effective channel length reduces with increasing oxygen content in the channel layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.title | Effect of the oxygen dependent device parameters on the electrical properties of a-Si-Zn-Sn-O thin film transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000802970300002 | - |
dc.identifier.doi | 10.1016/j.mee.2022.111794 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.261 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85130159971 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 261 | - |
dc.contributor.affiliatedAuthor | Kumar, Akash | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | Transmission line measurement | - |
dc.subject.keywordAuthor | Channel resistance | - |
dc.subject.keywordAuthor | a-SZTO | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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