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Fabrication of Highly Photosensitive MoS2 Photodetector Films Using Rapid Electrohydrodynamic-Jet Printing Process

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dc.contributor.authorHong, Seongin-
dc.contributor.authorBaek, Seungho-
dc.contributor.authorCan, T.T.T.-
dc.contributor.authorChoi, Woon-Seop-
dc.contributor.authorKim, Sunkook-
dc.date.accessioned2022-07-24T01:40:09Z-
dc.date.available2022-07-24T01:40:09Z-
dc.date.created2022-02-20-
dc.date.issued2022-07-
dc.identifier.issn2199-160X-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85128-
dc.description.abstractMolybdenum disulfide (MoS2) is a representative transition metal dichalcogenide (TMD) that has been extensively studied as a potential semiconducting material for next generation optoelectronic applications due to its exceptional optical, electrical, and mechanical properties. However, the lack of an efficient and scalable technique for MoS2 film synthesis is a major drawback. Therefore, in this study, electrohydrodynamic (EHD) jet printed MoS2 (EJP MoS2) photodetectors are reported. The optoelectronic characteristics of the EJP MoS2 photodetector are investigated using two modes: two-terminal and three-terminal configuration under light illumination. For the two-terminal mode of the EJP MoS2 photodetector, a photosensitivity of 3444% and a photoresponsivity of 1.68 A W–1 are achieved, respectively. Concurrently, the three-terminal mode of the EJP MoS2 photodetector exhibits an improved photosensitivity (4495%) and photoresponsivity (3.78 A W–1) under gate voltage. The proposed EHD jet printing method and the EJP MoS2 based photodetector will provide a feasible solution for high performance TMDs based photonics. © 2022 Wiley-VCH GmbH-
dc.language영어-
dc.language.isoen-
dc.publisherWILEY-
dc.relation.isPartOfAdvanced Electronic Materials-
dc.titleFabrication of Highly Photosensitive MoS2 Photodetector Films Using Rapid Electrohydrodynamic-Jet Printing Process-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000753676700001-
dc.identifier.doi10.1002/aelm.202101063-
dc.identifier.bibliographicCitationAdvanced Electronic Materials, v.8, no.7-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85124512281-
dc.citation.titleAdvanced Electronic Materials-
dc.citation.volume8-
dc.citation.number7-
dc.contributor.affiliatedAuthorHong, Seongin-
dc.type.docTypeArticle-
dc.subject.keywordAuthorelectrohydrodynamic inkjet-
dc.subject.keywordAuthormolybdenum disulfide-
dc.subject.keywordAuthorphotodetector-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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