In-Plane Crystallinity Effect on the Unipolar Resistance Switching Behavior of NiO Thin Film
- Authors
- Kim, Il Tae; Hur, Jaehyun; Chae, Seung Chul
- Issue Date
- Feb-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- RRAM; Unipolar Resistance Switching; NiO
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1924 - 1927
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 2
- Start Page
- 1924
- End Page
- 1927
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/8592
- DOI
- 10.1166/jnn.2016.11979
- ISSN
- 1533-4880
- Abstract
- We report on the resistance switching behavior of high quality NiO thin films grown on Pt(111)/SiOx/Si and Pt(111)/Al2O3 crystals. Polarity independent resistance switching, i.e., unipolar resistance switching exhibited a substrate crystallinity dependence during the resistance switching. The unipolar resistance switching was observed commonly in NiO film grown on both substrates. High resistance state of NiO thin film without in-plane crystallinity showed higher resistance than that of NiO films with in-plane crystallinity. The NiO thin film without in-plane crystallinity also required high set voltages for the resistance switching from high resistance state to low resistance state and showed nonlinear 1 V characteristics at high voltage region before the resistance switching.
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Collections - 공과대학 > 화공생명공학과 > 1. Journal Articles
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