Systematically-optimized charge transport properties in cumulatively solution-coated zinc tin oxide and applications for complementary inverter circuits combining organic p-type transistors
DC Field | Value | Language |
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dc.contributor.author | Seo, Juhyung | - |
dc.contributor.author | Park, Teahyun | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2022-12-04T01:40:08Z | - |
dc.date.available | 2022-12-04T01:40:08Z | - |
dc.date.created | 2022-09-03 | - |
dc.date.issued | 2022-08 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86202 | - |
dc.description.abstract | Zinc-tin-oxide (ZTO) is considered as a promising alternative thin-film semiconductors due to its merits of Earth-abundant materials, non-toxicity, and solution-processable low-cost manufacturing. However, there is still insufficient effort to implement a ZTO-based practical applications such as integrated circuits due to the lack of desirable switching behavior for circuit operation. In this context, we systematically investigate a solution processed ZTO film through a comprehensive analysis including scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission line method (TLM), and X-ray photoelectron spectroscopy (XPS). We also fabricate the synthesized ZTO-based transistors, and characteristics of the transistors are evaluated depending on annealing temperature and number of coatings. Through the systematic investigation, this study obtains the suitable turn-on voltage of VTO = 0.15 V as well as uniform charge transport property of 2.14 cm2/V∙s ± 5.14%. Furthermore, we apply the ZTO transistor optimized for the circuit to the complementary inverter logic, and the measured inverter circuit provides an excellent voltage gain of 141.18 V/V and improved noise margin as high as 71.4% of half the supply voltage. © 2022 Elsevier B.V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier | - |
dc.relation.isPartOf | Organic Electronics | - |
dc.title | Systematically-optimized charge transport properties in cumulatively solution-coated zinc tin oxide and applications for complementary inverter circuits combining organic p-type transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000888971200003 | - |
dc.identifier.doi | 10.1016/j.orgel.2022.106567 | - |
dc.identifier.bibliographicCitation | Organic Electronics, v.107 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85131095966 | - |
dc.citation.title | Organic Electronics | - |
dc.citation.volume | 107 | - |
dc.contributor.affiliatedAuthor | Seo, Juhyung | - |
dc.contributor.affiliatedAuthor | Park, Teahyun | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Thin-film transistor | - |
dc.subject.keywordAuthor | Voltage gain | - |
dc.subject.keywordAuthor | Zinc-tin-oxide | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | TOXICITY | - |
dc.subject.keywordPlus | INDIUM | - |
dc.subject.keywordPlus | GALLIUM | - |
dc.subject.keywordPlus | ZNO | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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