The Structural, Morphological, and Resistive Switching Memory Studies of Zinc Tungstate Prepared by Hydrothermal Method

Abstract

Nanostructure-based resistive switching memory devices are being developed for low power, multilevel storage capability, extended retention capacity, and scalable devices. The zinc tungstate (ZnWO4) nanoparticle was prepared via the facile hydrothermal method. The X-ray diffraction technique confirmed ZnWO4 monoclinic phase and crystallite nature. The scanning electron microscope was used to identify the rod-like ZnWO4 nanostructure, and further, the lattice orientation was investigated by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy confirmed the binding states with composition of ZnWO4. Resistive switching memory based on ZnWO4 was produced and resulted in low-operating voltage.