Dielectric surface-dependent photogating phenomenon in C8-BTBT leading to broad spectral ultraviolet to near-infrared photoresponse and linearly-weighted synaptic phototransistors
DC Field | Value | Language |
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dc.contributor.author | Shin, Jihyun | - |
dc.contributor.author | Kim, Somi | - |
dc.contributor.author | Jang, Byung Chul | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2023-01-19T00:40:14Z | - |
dc.date.available | 2023-01-19T00:40:14Z | - |
dc.date.created | 2023-01-18 | - |
dc.date.issued | 2023-01 | - |
dc.identifier.issn | 0143-7208 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86634 | - |
dc.description.abstract | Conventional organic phototransistors (OPTs) studies focus on the development of organic semiconductor layers to improve the photoresponsive characteristics. However, exploring a desirable dielectric surface is also an important factor in determining these photoresponsive characteristics in OPTs. This study investigates the dielectric surface-dependent broadband photoresponsive behaviors of C8-BTBT phototransistors and simulates optoelectrical artificial synapse behavior with SiO2-based OPT. Photogating effect is observed depending on the trap states between C8-BTBT and various dielectric interfaces: CYTOP, PMMA, Al2O3, and SiO2. No photogating effect is observed in the hydrophobic dielectric based OPTs, whereas shifts of turn-on voltage (Vturn-on) toward positive gate bias are observed in the hydrophilic dielectric based OPTs. The Vturn-on of SiO2-based OPTs is shifted by up to 43 V under 400 nm light irradiation, achieving high sensitivity of >1.74 x 104 A center dot A-1 and detectivity of >2.40 x 1012 Jones. In the hydrophilic dielectric based OPTs, devices are characterized in ultra-broad optical range from the ultraviolet (UV) to near-infrared (NIR). In addition, optoelectrical artificial synaptic simulation with SiO2-based OPT accomplishes a recognition rate of more than 95%, whereas, despite the same semi-conductor, CYTOP-based OPT accomplishes a recognition rate of 0%. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.relation.isPartOf | DYES AND PIGMENTS | - |
dc.title | Dielectric surface-dependent photogating phenomenon in C8-BTBT leading to broad spectral ultraviolet to near-infrared photoresponse and linearly-weighted synaptic phototransistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000890459500001 | - |
dc.identifier.doi | 10.1016/j.dyepig.2022.110882 | - |
dc.identifier.bibliographicCitation | DYES AND PIGMENTS, v.208 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85141288401 | - |
dc.citation.title | DYES AND PIGMENTS | - |
dc.citation.volume | 208 | - |
dc.contributor.affiliatedAuthor | Shin, Jihyun | - |
dc.contributor.affiliatedAuthor | Kim, Somi | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Interface trap engineering | - |
dc.subject.keywordAuthor | Photogating effect | - |
dc.subject.keywordAuthor | Surface energy | - |
dc.subject.keywordAuthor | Fluoropolymer | - |
dc.subject.keywordAuthor | Ultra -broadband photodetection | - |
dc.subject.keywordAuthor | Synaptic devices | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PHYSICS | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Applied | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Textiles | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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