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Zero Bias Operation: Photodetection Behaviors Obtained by Emerging Materials and Device Structures

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dc.contributor.authorSeo, Juhyung-
dc.contributor.authorKim, Yeong Jae-
dc.contributor.authorYoo, Hocheon-
dc.date.accessioned2023-01-19T01:41:54Z-
dc.date.available2023-01-19T01:41:54Z-
dc.date.created2023-01-18-
dc.date.issued2022-12-
dc.identifier.issn2072-666X-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86695-
dc.description.abstractZero-biased photodetectors have desirable characteristics for potentially next-generation devices, including high efficiency, rapid response, and low power operation. In particular, the detector efficiency can be improved simply by changing the electrode contact geometry or morphological structure of materials, which give unique properties such as energy band bending, photo absorbance and electric field distribution. In addition, several combinations of materials enable or disable the operation of selective wavelengths of light detection. Herein, such recent progresses in photodetector operating at zero-bias voltage are reviewed. Considering the advantages and promises of these low-power photodetectors, this review introduces various zero-bias implementations and reviews the key points.-
dc.language영어-
dc.language.isoen-
dc.publisherMDPI-
dc.relation.isPartOfMICROMACHINES-
dc.titleZero Bias Operation: Photodetection Behaviors Obtained by Emerging Materials and Device Structures-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000902871700001-
dc.identifier.doi10.3390/mi13122089-
dc.identifier.bibliographicCitationMICROMACHINES, v.13, no.12-
dc.description.isOpenAccessY-
dc.identifier.scopusid2-s2.0-85144613921-
dc.citation.titleMICROMACHINES-
dc.citation.volume13-
dc.citation.number12-
dc.contributor.affiliatedAuthorSeo, Juhyung-
dc.contributor.affiliatedAuthorYoo, Hocheon-
dc.type.docTypeReview-
dc.subject.keywordAuthorphotodetectors-
dc.subject.keywordAuthorthin-films-
dc.subject.keywordAuthorphotovoltaics-
dc.subject.keywordAuthorphototransistors-
dc.subject.keywordAuthorphotodiodes-
dc.subject.keywordPlusSHOCKLEY-QUEISSER LIMIT-
dc.subject.keywordPlusHIGH RESPONSIVITY-
dc.subject.keywordPlusGRAPHENE PHOTODETECTORS-
dc.subject.keywordPlus2-DIMENSIONAL MATERIALS-
dc.subject.keywordPlusSPECTRAL RESPONSE-
dc.subject.keywordPlusAU NANOPARTICLES-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusGATE-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaInstruments & Instrumentation-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Analytical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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반도체대학 (반도체·전자공학부)
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