Vertical organic transistors with a permeable base: from fundamentals to performance prediction

Abstract

Vertical transistors are an enabler for future high-density, low-power, and high-speed electronics. However, there is still limited knowledge on these unconventional devices, resulting in a lack of rational design rules. This article clarifies the physical and electrical mechanisms of vertical organic permeable-base transistors. Unique structural features of these devices are unveiled by reproducing the switching characteristics of a fabricated high-performance fullerene transistor. The origin of base-induced current saturation is illustrated by a bias-dependent carrier and field distribution inside a semiconductor film. A series of predictive simulations are carried out based on the accumulated insights, laying a foundation for theoretically guided materials and device engineering.