Vertical organic transistors with a permeable base: from fundamentals to performance prediction
DC Field | Value | Language |
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dc.contributor.author | Lee, Hyuna | - |
dc.contributor.author | Lim, Kyung-Geun | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.accessioned | 2023-05-16T02:40:09Z | - |
dc.date.available | 2023-05-16T02:40:09Z | - |
dc.date.created | 2023-05-15 | - |
dc.date.issued | 2023-04 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87750 | - |
dc.description.abstract | Vertical transistors are an enabler for future high-density, low-power, and high-speed electronics. However, there is still limited knowledge on these unconventional devices, resulting in a lack of rational design rules. This article clarifies the physical and electrical mechanisms of vertical organic permeable-base transistors. Unique structural features of these devices are unveiled by reproducing the switching characteristics of a fabricated high-performance fullerene transistor. The origin of base-induced current saturation is illustrated by a bias-dependent carrier and field distribution inside a semiconductor film. A series of predictive simulations are carried out based on the accumulated insights, laying a foundation for theoretically guided materials and device engineering. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.title | Vertical organic transistors with a permeable base: from fundamentals to performance prediction | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000968165000001 | - |
dc.identifier.doi | 10.1039/d3tc00299c | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.16, pp.5422 - 5430 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85152705041 | - |
dc.citation.endPage | 5430 | - |
dc.citation.startPage | 5422 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 11 | - |
dc.citation.number | 16 | - |
dc.contributor.affiliatedAuthor | Lee, Hyuna | - |
dc.contributor.affiliatedAuthor | Kim, Chang-Hyun | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | POWER | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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