Vertical organic transistors with a permeable base: from fundamentals to performance prediction
- Authors
- Lee, Hyuna; Lim, Kyung-Geun; Kim, Chang-Hyun
- Issue Date
- Apr-2023
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.16, pp.5422 - 5430
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY C
- Volume
- 11
- Number
- 16
- Start Page
- 5422
- End Page
- 5430
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87750
- DOI
- 10.1039/d3tc00299c
- ISSN
- 2050-7526
- Abstract
- Vertical transistors are an enabler for future high-density, low-power, and high-speed electronics. However, there is still limited knowledge on these unconventional devices, resulting in a lack of rational design rules. This article clarifies the physical and electrical mechanisms of vertical organic permeable-base transistors. Unique structural features of these devices are unveiled by reproducing the switching characteristics of a fabricated high-performance fullerene transistor. The origin of base-induced current saturation is illustrated by a bias-dependent carrier and field distribution inside a semiconductor film. A series of predictive simulations are carried out based on the accumulated insights, laying a foundation for theoretically guided materials and device engineering.
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