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Origin of extra diffraction spots for high crystalline alpha-Ga2O3open access
- Authors
- Lee, Yong-Hee; Yang, Duyoung; Gil, Byeongjun; Sheen, Mi-Hyang; Yoon, Euijoon; Park, Yongjo; Jang, Ho-Won; Yoon, Sangmoon; Kim, Miyoung; Kim, Young-Woon
- Issue Date
- Feb-2023
- Publisher
- AIP Publishing
- Citation
- AIP ADVANCES, v.13, no.2
- Journal Title
- AIP ADVANCES
- Volume
- 13
- Number
- 2
- ISSN
- 2158-3226
- Abstract
- This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180 & DEG; inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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Related Researcher
- YOON, SANGMOON
- BioNano Technology (Department of Physics)