Improved Performance of Perovskite Deep-Ultraviolet Photodetector Using FAPb(I/Br)(3) as Light Absorption Layeropen access
- Authors
- Hong, Soo Beom; Kim, Sangmo; Choi, Hyung Wook
- Issue Date
- Feb-2023
- Publisher
- MDPI
- Keywords
- deep-ultraviolet(UV) photodetector; mixed-anion perovskite; perovskite device
- Citation
- COATINGS, v.13, no.2
- Journal Title
- COATINGS
- Volume
- 13
- Number
- 2
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87850
- DOI
- 10.3390/coatings13020341
- ISSN
- 2079-6412
- Abstract
- Constitutive engineering by adding halide anions is one effective way to improve the performance of photodetectors by adjusting the bandgap. In this study, a mixed-anion perovskite thin film was facile fabricated by post-processing of a pure FAPbI(3) film with a formamidinium bromide (FABr) solution. In addition, the manufactured thin film was used as the light absorption layer, SnO2-SDBS as the electron transport layer, and spiro-OMeTAD as the hole injection layer to fabricate a deep ultraviolet(UV) photodetector. The device exhibited a response of 43.8 mA/W-1, a detectability of 3.56 x 10(13) Jones, and an external quantum efficiency of 38%. Therefore, this study is promising for various applications in the deep-UV wavelength region.
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