Tunable Negative Differential Resistance Effect in a-SZTO/Dielectric/ SZTO Heterostructure TFTs at Room Temperature
DC Field | Value | Language |
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dc.contributor.author | Murugan, Balaji | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2023-05-19T02:40:19Z | - |
dc.date.available | 2023-05-19T02:40:19Z | - |
dc.date.created | 2023-05-15 | - |
dc.date.issued | 2023-04 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87867 | - |
dc.description.abstract | We experimentally demonstrate the resonant tunneling and negative differential resistance (NDR) in a-SZTO/ dielectric/SZTO heterostructure thin film transistors (TFTs) at room temperature (RT) for the first time. Here, we study the resonant tunneling and the NDR tunability for different middle-layer dielectric and gate biases. The dielectric materials of HfO2, ZrO2, and MgO are used in the a-SZTO/dielectric/SZTO heterostructure devices and are named SHS, SZS, and SMS in this work. The resonant tunneling through an insulator occurs when the energy bands of the two amorphous-SiZnSnO (a-SZTO) are aligned. The previous results of NDR based on resonant tunneling were obtained only using two-dimensional (2D) materials. But we observe the NDR results with a peak-to-valley current ratio (PVCR) of 3 at RT by utilizing the bulk (three-dimensional, 3D) oxide materials for the first time in this work. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.title | Tunable Negative Differential Resistance Effect in a-SZTO/Dielectric/ SZTO Heterostructure TFTs at Room Temperature | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000959771600001 | - |
dc.identifier.doi | 10.1021/acsaelm.3c00178 | - |
dc.identifier.bibliographicCitation | ACS APPLIED ELECTRONIC MATERIALS, v.5, no.4, pp.2345 - 2350 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85151552512 | - |
dc.citation.endPage | 2350 | - |
dc.citation.startPage | 2345 | - |
dc.citation.title | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | negative differential resistance | - |
dc.subject.keywordAuthor | resonant tunneling | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordAuthor | peak-to-valley current ratio | - |
dc.subject.keywordAuthor | heterostructure TFT | - |
dc.subject.keywordAuthor | a-SZTO | - |
dc.subject.keywordPlus | RESONANT-TUNNELING DIODE | - |
dc.subject.keywordPlus | HIGH-CURRENT DENSITY | - |
dc.subject.keywordPlus | WAALS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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