Binder-free boron-doped Si nanowires toward the enhancement of lithium-ion capacitor
- Authors
- Li, M.; Song, Seunghyun; Li, Yang; Jevasuwan, Wipakorn; Fukata, Naoki; Bae, Joonho
- Issue Date
- Aug-2023
- Publisher
- IOP Publishing Ltd
- Keywords
- silicon nanowire; boron doping; lithium-ion capacitor
- Citation
- NANOTECHNOLOGY, v.34, no.35
- Journal Title
- NANOTECHNOLOGY
- Volume
- 34
- Number
- 35
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88310
- DOI
- 10.1088/1361-6528/acd702
- ISSN
- 0957-4484
1361-6528
- Abstract
- Lithium-ion capacitors (LICs) are next-generation electrochemical storage devices that combine the benefits of both supercapacitors and lithium-ion batteries. Silicon materials have attracted attention for the development of high-performance LICs owing to their high theoretical capacity and low delithiation potential (similar to 0.5 V versus Li/Li+). However, sluggish ion diffusion has severely restricted the development of LICs. Herein, a binder-free anode of boron-doped silicon nanowires (B-doped SiNWs) on a copper substrate was reported as an anode for LICs. B-doping could significantly improve the conductivity of the SiNW anode, which could enhance electron/ion transfer in LICs. As expected, the B-doped SiNWs//Li half-cell delivered a higher initial discharge capacity of 454 mAh g(-1) with excellent cycle stability (capacity retention of 96% after 100 cycles). Furthermore, the near-lithium reaction plateau of Si endows the LICs with a high voltage window (1.5-4.2 V), and the as-fabricated B-doped SiNWs//AC LIC possesses the maximum energy density value of 155.8 Wh kg(-1) at a battery-inaccessible power density of 275 W kg(-1). This study provides a new strategy for using Si-based composites to develop high-performance LIC.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 바이오나노대학 > 나노물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.