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Ni-Doped SnO2 as an Electron Transport Layer by a Low-Temperature Process in Planar Perovskite Solar Cellsopen access

Authors
Quy, Hoang V.Bark, Chung W.
Issue Date
Jul-2022
Publisher
AMER CHEMICAL SOC
Citation
ACS OMEGA, v.7, no.26, pp 22256 - 22262
Pages
7
Journal Title
ACS OMEGA
Volume
7
Number
26
Start Page
22256
End Page
22262
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88497
DOI
10.1021/acsomega.2c00965
ISSN
2470-1343
Abstract
Perovskite solar cells (PSCs) based on a planar structure have recently become more attractive due to their simple manufacturing process and relatively low cost, while most perovskite solar cells employ highly porous TiO2 as an electron transport layer in mesoporous devices offering higher energy conversion efficiency (PCE). In planar structural devices, non-radiative recombination effects of the absorber layer and the electron transport layer cause potential loss and lower PCE. We created an efficient electron transport layer by combining low-temperature Ni-doped SnO2 with SDBS as a surfactant (denoted as Ni:SnO2). Doping Ni+ into low-temperature solution-processed SnO2 increased the power conversion efficiency of PSCs from 17.8 to 19.7%.
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College of IT Convergence (Department of Electrical Engineering)
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