Arc discharge synthesis of graphene with enhanced boron doping concentration for electrochemical applications
- Authors
- Kim, Chunghun; Kim, Jeong-Gil; Kim, Nam Dong; Kim, Myung Jong
- Issue Date
- Nov-2023
- Publisher
- ELSEVIER
- Keywords
- Arc discharge; Area normalized capacitance; Electrical double layer capacitor; Boron-doped graphene
- Citation
- APPLIED SURFACE SCIENCE, v.637
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 637
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88684
- DOI
- 10.1016/j.apsusc.2023.157825
- ISSN
- 0169-4332
- Abstract
- The physicochemical properties of graphene, such as the bandgap and electrical conductivity, can be tuned when the carbon atoms are replaced with other heteroatoms. In addition to nitrogen, boron is a dopant that can compensate for the properties lacking in graphene; however, boron-doped graphene has not received significant attention owing to its low doping rate. In this study, we report an improvement in the doping efficiency of arc graphene by utilizing a boron precursor and graphene oxide as anode carbon fillers. X-ray photoelectron spec-troscopy revealed that the doping level of the synthesized graphene flakes (5.7at.%) was significantly higher than that of boron-doped arc graphene reported in the literature (3at.%). Cyclic voltammetry, electrochemical impedance spectroscopy, and constant-current charge/discharge experiments were performed to investigate the electrochemical properties of boron-doped graphene. The synthesized boron-doped graphene exhibited an areal capacitance of 66 & mu;F cm  2, which is superior to that of other doped carbon materials. The electrochemical ac-tivity of boron-doped graphene is affected more by functionalized doping than by substitutional doping, because of the improved wettability displayed by the former. Boron-doped graphene flakes required for various appli-cations can be easily obtained by arc discharge synthesis.
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