Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Han, Youngmin | - |
dc.contributor.author | Lee, Dong Hyun | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2023-08-24T10:40:33Z | - |
dc.date.available | 2023-08-24T10:40:33Z | - |
dc.date.created | 2023-08-24 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88827 | - |
dc.description.abstract | Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types of a-IGZO TFTs with different oxygen flow rates and then investigated changes in electrical characteristics. Atomic force microscopy (AFM) was performed to analyze the surface morphology of the a-IGZO films according to the oxygen gas rate. Furthermore, X-ray photoelectron spectroscopy (XPS) analysis was performed to confirm changes in oxygen vacancies of a-IGZO films. The optimized a-IGZO TFT has enhanced electrical characteristics such as carrier mobility (& mu;) of 12.3 cm(2)/V & BULL;s, on/off ratio of 1.25 x 10(10) A/A, subthreshold swing (S.S.) of 3.7 V/dec, and turn-on voltage (V-to) of -3 V. As a result, the optimized a-IGZO TFT has improved electrical characteristics with oxygen vacancies having the highest conductivity. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.relation.isPartOf | MICROMACHINES | - |
dc.title | Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 001038950100001 | - |
dc.identifier.doi | 10.3390/mi14071394 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.14, no.7 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85166212118 | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 14 | - |
dc.citation.number | 7 | - |
dc.contributor.affiliatedAuthor | Han, Youngmin | - |
dc.contributor.affiliatedAuthor | Lee, Dong Hyun | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.contributor.affiliatedAuthor | Kwon, Sang Jik | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | a-IGZO | - |
dc.subject.keywordAuthor | magnetron sputtering | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | oxygen vacancy | - |
dc.subject.keywordAuthor | oxygen flow rate | - |
dc.subject.keywordPlus | ELECTRICAL PERFORMANCE | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | INVERTER | - |
dc.subject.keywordPlus | DESIGN | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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