Enhanced charge transport behaviors of single-walled carbon nanotube transistors by phenylphosphonic acid doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Hyun | - |
dc.contributor.author | Hwang, Siwon | - |
dc.contributor.author | Kim, Bongjun | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2023-10-21T01:40:23Z | - |
dc.date.available | 2023-10-21T01:40:23Z | - |
dc.date.issued | 2023-10 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89395 | - |
dc.description.abstract | Inkjet printing technology holds promise as a cost-effective method for fabricating large-area electronics, with high compatibility with various substrates. In this paper, we investigate the electrical doping behaviors of p-type transistors based on single-walled carbon nanotubes (SWCNTs), where semiconducting channels and electrodes are patterned using inkjet printing. We demonstrate improved charge transport properties by encapsulating SWCNTs with phenylphosphonic acid (PPA) without annealing. The PPA-coated SWCNT transistors exhibit significantly enhanced hole mobility, reaching approximately 8.25 cm2 V-1 s-1. The presence of the benzene ring in PPA facilitates hole injection and induces a p-doping effect, resulting in a 4.3-fold increase in the on-current level of the transistors. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER | - |
dc.title | Enhanced charge transport behaviors of single-walled carbon nanotube transistors by phenylphosphonic acid doping | - |
dc.type | Article | - |
dc.identifier.wosid | 001073097300001 | - |
dc.identifier.doi | 10.1016/j.cap.2023.08.011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.54, pp 67 - 74 | - |
dc.identifier.kciid | ART003010391 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85172180481 | - |
dc.citation.endPage | 74 | - |
dc.citation.startPage | 67 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 54 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | Inkjet printing | - |
dc.subject.keywordAuthor | Single-walled carbon nanotube | - |
dc.subject.keywordAuthor | Phenylphosphonic acid | - |
dc.subject.keywordAuthor | Molecular doping | - |
dc.subject.keywordAuthor | Self-assembled monolayers | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ION-IMPLANTED BORON | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | SWCNTS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.