Influence of tungsten oxide concentration on structural, morphological, compositional, linear and non-linear optical properties, and vibrational properties on NiO:WO3 thin films

Abstract

Mixed nickel-tungsten oxide, NiO:WO3 (90:10, 85:15) thin films with different tungsten oxide (WO3) concen-trations of 10 and 15% were deposited using the radio frequency (RF) sputtering technique. An X-ray diffraction analysis reported the amorphous nature of the films. A SEM study showed smooth morphology. EDAX confirms the compositional purity, in which the nickel content decreases, while the tungsten and oxygen content increase with an increased WO3 concentration. The average transmittance of the NiO:WO3 (90:10, 85:15) films decreases from 79 to 75% as a consequence of increased thickness. The Urbach energy (Eu) enhances because of increased defects (localized states) inside the films induced by tungsten oxide addition. The energy bandgap decreases from 2.66 to 2.48 eV due to the formation of new localized energy states inside the band gap (Eg). The refractive index (n) acquired from different proposed models for the entire UV-Vis-NIR region has increased with increasing WO3 concentration, implying the escalation in densification (or packing density) of prepared films. The optical pa-rameters like n, k, & epsilon;1, & epsilon;2, electronic polarizability (& alpha;p), optical conductivity (& sigma;op), electric conductivity (& sigma;e), volume and the surface energy loss function (VELF AND SELF) vary with WO3 concentration. The dispersion energy parameters (Eo, Ed), resulting from the Wemple and Didomenico (WD) model, decreases. The optical non -linear susceptibility, & chi;(3), decreased with increasing WO3 concentration. The photoluminescence (PL) emissions were perceived at 368 nm and 423 nm, assignable to 3 d8 Ni2+ ions transitions. Micro-Raman detected peaks at 570 cm-1 and 1100 cm-1 ascribing Ni-O bond vibrations, whereas the peak spotted at 870 cm-1 is ascribed to a W-O bond vibration. The deposited films are good enough for electrochromic and optoelectronic device fabrications.